Radiation hardened micron and submicron MOSFETS containing fluorinated oxides
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:6959469
- Yale Univ., New Haven, CT (US)
The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low energy F implantation onto the surface of the polycrystalline silicon gate electrode, followed by annealing at 950{degrees}C to diffuse F into the gate SiO{sub 2} toward the SiO{sub 2}/Si interface. The improved interface radiation hardness is attributed to the strain relaxation near the SiO{sub 2}/Si interface by fluorine incorporation. The results demonstrate the potential of this technique for future radiation hard micron and submicron MOS devices.
- OSTI ID:
- 6959469
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTALS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
FLUORINATION
GATING CIRCUITS
HALOGENATION
HARDENING
HOLE MOBILITY
INTERFACES
ION IMPLANTATION
MOBILITY
MOS TRANSISTORS
MOSFET
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTALS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
FLUORINATION
GATING CIRCUITS
HALOGENATION
HARDENING
HOLE MOBILITY
INTERFACES
ION IMPLANTATION
MOBILITY
MOS TRANSISTORS
MOSFET
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS