Effects of avalanche hole injection in fluorinated SiO[sub 2] MOS capacitors

Journal Article · Wed Mar 31 23:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215152· OSTI ID:6599813

Vishnubhotla, Lakshmanna; Ma, Tsoping ^[1]; Tseng, Hsinghuang; Tobin, P J ^[2]

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1. Yale Univ., New Haven, CT (United States)
2. Motorola Inc., Austin, TX (United States)

Significantly improved immunity to hot-hole damage of the SiO[sub 2]/Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10[sup 16]/cm[sup 2]). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.

• OSTI ID: 6599813
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:4; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
DAMAGE
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
EVALUATION
FABRICATION
FLUORINATION
HALOGENATION
HOLES
ION IMPLANTATION
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRAPPING
TRAPS