Avalanche injection of holes into SiO/sub 2/
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6633787
Avalanche injection techniques are used to provide hole currents through MOS capacitors and study the trapping of holes in the oxide layer. Although radiation is not in any way involved in these experiments, the trapped positive charge and surface states resulting from hole injection are similar to those obtained using radiation. The processing and oxide thickness dependence of hole trapping phenomena are also investigated. Prolonged post-oxidation annealing treatments are shown to lead to enhanced hole trapping in ''hardened'' oxides. Results indicate a strong similarity between hole trapping induced by avalanche injection and by radiation.
- Research Organization:
- IBM T.J. Watson Research Center, Yorktown Heights, N.Y.
- OSTI ID:
- 6633787
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
HARDENING
MANUFACTURING
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
HARDENING
MANUFACTURING
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES