A bias voltage dependence of trapped hole annealing and its measurement technique

Conference · Sun Dec 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5614162

Kuboyama, S; Goka, T; Tamura, T ^[1]

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1. National Space Development Agency, Tokyo (Japan)

This paper reports on a bias voltage dependence of the trapped hole annealing that was observed by using a unique irradiation technique with a MOS capacitor which exhibits almost no annealing of the trapped holes at negative bias condition. The result showed the change of time scale for the annealing behavior with the Boltzmann's factor as a function of surface potential of the substrate. This result suggests that the oxide of the MOS capacitor has trap level positioned above the Si conduction band edge. Additional annealing experiment at several temperatures supported the results and the position of the trap level was determined. The trap level confirmed may be one of commonly observed levels, although it is a special case that the MOS capacitor has only the trap level.

• OSTI ID: 5614162
• Report Number(s): CONF-910751--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
• Country of Publication: United States
• Language: English

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BOLTZMANN EQUATION
CAPACITORS
CHALCOGENIDES
DIFFERENTIAL EQUATIONS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
EQUATIONS
EQUIPMENT
HEAT TREATMENTS
HOLES
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PARTIAL DIFFERENTIAL EQUATIONS
POTENTIALS
SEMICONDUCTOR DEVICES
SUBSTRATES
SURFACE POTENTIAL
TRANSISTORS
TRAPS