Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

Journal Article · Thu Dec 01 04:00:00 EST 1994 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.340620· OSTI ID:32034

Pershenkov, V S; Belyakov, V V; Shalnov, A V ^[1]

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1. Moscow Engineering Physics Inst. (Russian Federation)

A method for low-dose-rate MOS device response testing is presented and verified. The test technique is based on the use of a special switched-bias irradiation with subsequent positive and negative pulses. The negative bias pulses provide nearly complete annealing of the oxide charge trapped during the positive bias pulses. As a result, after a series of positive/negative cycles the value of oxide-trapped charge does not change significantly but the interface charge increases. The advantages, limitations and applications of this test technique are described.

• OSTI ID: 32034
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 41; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
IONIZING RADIATIONS
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RESPONSE FUNCTIONS