Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge

Journal Article · Tue Dec 01 04:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736456· OSTI ID:323910

Fleetwood, D M; Winokur, P S; Shaneyfelt, M R; Riewe, L C ^[1]; Flament, O; Paillet, P; Leray, J L ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. CEA, Bruyeres-Le-Chatel (France). Centre d`Etudes de Bruyeres

Radiation-induced trapped charge densities in 45-nm radiation-hardened oxides are estimated via capacitance-voltage (C-V) and thermally stimulated current (TSC) techniques as functions of irradiation and/or isochronal anneal temperature. Reductions in trapped-hole charge were greater for {minus}10 V and 0 V isochronal anneals than for 10 V anneals. This is attributed to enhanced electron-hole dipole pairing during positive-bias anneal. Between 22 C and 125 C, the trapped electron charge increases for 10 V isochronal anneals, and is approximately constant for 0 V and {minus}10 V anneals. Interface-trap charge decreases for 0 V isochronal annealing above 80 C, and {+-}10 V annealing above 100 C. Elevated temperature irradiation at 10 V shows similar trends to 10 V isochronal anneals. Trapped-hole energy scales derived from C-V measurements for positive or zero bias isochronal anneals are found to be inaccurate, due to the different temperature dependencies of trapped-hole annealing and trapped-electron buildup. Refined estimates of trapped-hole attempt-to-escape frequency are obtained via TSC. Isochronal annealing and elevated temperature irradiation techniques generally cannot be used for hardness assurance testing unless the results are calibrated to the low-rate irradiation or long-term annealing response for a given technology.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 323910
• Report Number(s): CONF-980705--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
CHARGE DENSITY
OXIDES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TRAPPING