Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devices

Journal Article · Mon Apr 20 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107126· OSTI ID:7237690

Fleetwood, D M; Reber, Jr, R A; Winokur, P S ^[1]

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1. Sandia National Laboratories, Department 1332, Albuquerque, New Mexico 87185-5800 (United States)

Thermally stimulated current- and capacitance-voltage techniques are combined to provide the first quantitative estimates of the contributions of trapped-hole annealing and electron trapping to oxide-trap charge neutralization in metal-oxide-semiconductor devices. For 350-nm nonradiation-hardened oxides, trapped electrons compensate {similar to}15% of the radiation-induced trapped positive charge after x-ray irradiation (evidently forming dipolar defects), and {similar to}65% of the trapped positive charge remaining after positive-bias annealing at 80 {degree}C. For 45-nm radiation-hardened oxides, trapped electrons compensate {similar to}45% of the trapped positive charge after irradiation, and {similar to}70% after annealing. Implications for models of oxide-trap-charge buildup and annealing are discussed.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7237690
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:16; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
DEFECTS
DIRECT ENERGY CONVERTERS
EQUIPMENT
HEAT TREATMENTS
MOS SOLAR CELLS
MOS TRANSISTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR DEVICES
SOLAR CELLS
SOLAR EQUIPMENT
SPACE CHARGE
TRANSISTORS
TRANSPORT
TRAPPING