Reversibility of trapped hole annealing
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6318727
Annealing under negative bias of metal-oxide semiconductor field-effect transistors (MOSFETs) previously irradiated and annealed under positive bias is studied as a function of oxide field and time. Using three different sets of samples ranging from hard to soft, the authors have observed a considerable reversal of the oxide trapped charge component, ..delta..V/sub ot/, in the two harder sets and essentially no reversal in the soft set. The authors interpret these results in terms of electrons tunneling back and forth from the Si substrate to electron traps associated with a simple oxygen vacancy (an E' center) in the oxide. Some percentage of these compensating electrons do re-form the Si-Si bonds broken by the trapped holes. These results, along with their interpretation, are consistent with a large body of previous work. In addition, their data suggest that the energy level of the hole trap is below the valence band edge of Si.
- Research Organization:
- Harry Diamond Labs., U.S. Army LABCOM, Adelphi, MD (US)
- OSTI ID:
- 6318727
- Report Number(s):
- CONF-880730-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELEMENTS
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
IRRADIATION
LEPTON BEAMS
MOS TRANSISTORS
MOSFET
NONMETALS
OXYGEN
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PLASMA
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SOLID-STATE PLASMA
TRANSISTORS
TRAPPING
TUNNELING
VACANCIES
VALENCE
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNEALING
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELEMENTS
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
IRRADIATION
LEPTON BEAMS
MOS TRANSISTORS
MOSFET
NONMETALS
OXYGEN
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PLASMA
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SOLID-STATE PLASMA
TRANSISTORS
TRAPPING
TUNNELING
VACANCIES
VALENCE