Time dependence of switching oxide traps
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6488856
- Army Research Lab., Adelphi, MD (United States)
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3 [times] 10[sup 3] s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.
- OSTI ID:
- 6488856
- Report Number(s):
- CONF-940726--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
HOLES
MATHEMATICAL MODELS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
HOLES
MATHEMATICAL MODELS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING