Time-dependence hole and electron trapping effects in SIMOX buried oxides

Conference · Sat Dec 01 04:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5722109

Boesch, Jr, H E; Taylor, T L ^[1]; Hite, L R; Bailey, W E ^[2]

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1. Harry Diamond Labs., Adelphi, MD (USA)
2. Texas Instruments, Inc., Dallas, TX (USA)

Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved {ital I-V} measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk.

• OSTI ID: 5722109
• Report Number(s): CONF-900723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
FIELD EFFECT TRANSISTORS
HOLES
ION IMPLANTATION
LEPTONS
MELTING
NONMETALS
OXYGEN
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RECRYSTALLIZATION
RESOLUTION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TIME DEPENDENCE
TIME RESOLUTION
TIMING PROPERTIES
TRANSISTORS
TRAPPING
ZONE MELTING