Thermal annealing of trapped holes in SIMOX buried oxides
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5707878
- Harry Diamond Labs., Adelphi, MD (United States)
This paper reports on the thermal detrapping of radiation-generated trapped holes in SIMOX (separation by implantation of oxygen) buried oxides that has been investigated with an isothermal anneal experiment. Recovery from the radiation damage exhibits Arrhenius behavior; the recovery times vary exponentially as a function of inverse temperature. Activation energies range from about 0.45 to 1.65 eV, indicating probable thermal detrapping of holes from a broad distribution in hole trap depths. The high activation energies are an indication that some of the holes are deeply trapped in the oxide.
- OSTI ID:
- 5707878
- Report Number(s):
- CONF-910751--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Conference
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Fri Nov 30 23:00:00 EST 1990
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
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Conference
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Tue Nov 30 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6953189
Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides
Journal Article
·
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACTIVATION ENERGY
ANNEALING
ARRHENIUS EQUATION
CHALCOGENIDES
CHARGED PARTICLES
ENERGY
EQUATIONS
HEAT TREATMENTS
HOLES
ION IMPLANTATION
IONS
ISOTHERMAL PROCESSES
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TRANSISTORS
TRAPS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACTIVATION ENERGY
ANNEALING
ARRHENIUS EQUATION
CHALCOGENIDES
CHARGED PARTICLES
ENERGY
EQUATIONS
HEAT TREATMENTS
HOLES
ION IMPLANTATION
IONS
ISOTHERMAL PROCESSES
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
TRANSISTORS
TRAPS