Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides
Journal Article
·
· IEEE Transactions on Nuclear Science
- Centre d`Etudes de Bruyeres, Bruyeres-Le-Chatel (France)
- CEA-Technologies Avancees, Grenoble (France)
- SOITEC, Grenoble (France)
Electron and hole trapping and detrapping have been investigated in new SIMOX buried oxides of different thicknesses (80 to 400 nm) after X-ray irradiation. Isochronal annealing and thermally stimulated current results are presented along with trap densities and cross section values extracted from static measurements on n-channel MOSFET`s. The charge trapping properties are shown to be similar in the different SIMOX oxides. Charge detrapping results show the extension of the trapped charge distribution towards higher energy than in thermal SiO{sub 2}.
- OSTI ID:
- 203737
- Report Number(s):
- CONF-950716--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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