The nature of the trapped hold annealing process

Conference · Fri Dec 01 04:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6959452

Lelis, A J; Oldham, T R; Boesch, Jr, H E; McLean, F B ^[1]

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1. Harry Diamond Labs, US Army LABCOM, Adelphi, MD (US)

Postirradiation positive-bias annealing and negative-bias reverse-annealing of trapped positive charge in metal-oxide-semiconductor (MOS) oxides were studied as a function of temperature. Below 125{degrees}C, only a slight increase in the positive annealing response was observed, consistent with a tunneling process to a trap level below the Si valence band edge. A much larger increase in the trapped hole annealing rate was observed above this temperature. This change is discussed in terms of two possible mechanisms: tunneling to an excited state above the Si conduction band and thermal detrapping of holes to the oxide valence band.

• OSTI ID: 6959452
• Report Number(s): CONF-890723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 36:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
656001 -- Condensed Matter Physics-- Solid-State Plasma
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CURRENT DENSITY
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
EXCITED STATES
FERMIONS
HARDENING
HEAT TREATMENTS
HOLE MOBILITY
LEPTONS
MOBILITY
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS
TUNNELING
VALENCE