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Title: Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications

Abstract

The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.

Authors:
 [1]; ;  [2]
  1. Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096 (China)
  2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
Publication Date:
OSTI Identifier:
22262546
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FLUORINE; PASSIVATION; SILICATES; SILICON OXIDES; TRAPPED ELECTRONS; TRAPPING; TUNNEL EFFECT; ZIRCONIUM OXIDES

Citation Formats

Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications. United States: N. p., 2014. Web. doi:10.1063/1.4873388.
Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., & Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications. United States. doi:10.1063/1.4873388.
Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. Mon . "Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications". United States. doi:10.1063/1.4873388.
@article{osti_22262546,
title = {Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications},
author = {Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk and Shi, R. P. and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk},
abstractNote = {The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.},
doi = {10.1063/1.4873388},
journal = {Applied Physics Letters},
number = 16,
volume = 104,
place = {United States},
year = {Mon Apr 21 00:00:00 EDT 2014},
month = {Mon Apr 21 00:00:00 EDT 2014}
}
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