Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications
Abstract
The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.
- Authors:
- Publication Date:
- OSTI Identifier:
- 22262546
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; FLUORINE; PASSIVATION; SILICATES; SILICON OXIDES; TRAPPED ELECTRONS; TRAPPING; TUNNEL EFFECT; ZIRCONIUM OXIDES
Citation Formats
Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications. United States: N. p., 2014.
Web. doi:10.1063/1.4873388.
Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., & Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications. United States. https://doi.org/10.1063/1.4873388
Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk, Shi, R. P., and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk. 2014.
"Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications". United States. https://doi.org/10.1063/1.4873388.
@article{osti_22262546,
title = {Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications},
author = {Huang, X. D., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk and Shi, R. P. and Lai, P. T., E-mail: eexdhuang@gmail.com, E-mail: laip@eee.hku.hk},
abstractNote = {The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.},
doi = {10.1063/1.4873388},
url = {https://www.osti.gov/biblio/22262546},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 104,
place = {United States},
year = {Mon Apr 21 00:00:00 EDT 2014},
month = {Mon Apr 21 00:00:00 EDT 2014}
}