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Deuterium depth profiles in metals using imaging field desorption

Conference ·
OSTI ID:7249173
Depth profiles of 80 eV deuterium ions implanted in-situ into (110) tungsten have been measured by Imaging, Field-Desorption Mass Spectrometry. The relative abundance of deuterium was measured from the surface to a depth of 300A with less than 3A depth resolution by controlled field-evaporation of the specimen, and time-of-flight mass spectroscopy. The position of the depth distribution maximum (57 +- 3A from the surface) is shown to be in close agreement with that predicted theoretically for low energy deuterium implants using an amorphous-solid model. Structure in the distribution is attributed to surface morphology and channeling phenomena in the near surface region. Implanted impurity species from the ion source and tungsten surface have also been observed. For C/sup +/, C/sup 2 +/ and 0/sup +/, penetration is limited to less than 30A, with abundance decreasing exponentially from the surface. These results are interpreted in the context of the CTR first-wall impurity problem, and are used to suggest a novel method for in-situ characterization of low energy plasma species in operating CTR devices.
Research Organization:
Sandia Labs., Albuquerque, N.Mex. (USA)
DOE Contract Number:
E(29-1)-789
OSTI ID:
7249173
Report Number(s):
SAND-76-5579; CONF-760921-4
Country of Publication:
United States
Language:
English