Depth Profiling of N and C in Ion Implanted ZnO and Si Using Deuterium Induced Nuclear Reaction Analysis
- National Isotope Centre, GNS Science, P.O. Box 31312, Lower Hutt (New Zealand)
Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x10{sup 14} ions cm{sup -2}. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm{sup -1} compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced {sup 12}C(d,p){sup 13}C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion implanter chamber greatly reduces the amount of carbon impurity on the surface of ion implanted silicon. Various implantations with N{sub 2}, O{sub 2}, NO, NO{sub 2} and Pb ions were performed with and without cooling of the liquid nitrogen trap. Simultaneous detection of ppm-level concentrations of {sup 12}C, {sup 16}O and {sup 14}N enables highly sensitive measurement of impurities that may be incorporated during the fabrication process, transport of the samples and/or storage of the samples in air.
- OSTI ID:
- 21251721
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033682; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CARBON
CARBON 12
CARBON 12 TARGET
CARBON 13
DEUTERIUM
DEUTERON REACTIONS
DEUTERONS
IMPURITIES
ION BEAMS
ION IMPLANTATION
LEAD IONS
MEV RANGE 01-10
MONOCRYSTALS
NITRIC OXIDE
NITROGEN
NITROGEN 14
NITROGEN DIOXIDE
NITROGEN IONS
NUCLEAR REACTION ANALYSIS
OXYGEN
OXYGEN 16
PROTONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SPATIAL DISTRIBUTION
ZINC OXIDES