Properties of nitrogen implanted and electron beam annealed bulk ZnO
Journal Article
·
· Journal of Applied Physics
- GNS Science, National Isotope Centre, 30 Gracefield Road, P.O. Box 31312 Lower Hutt (New Zealand)
- MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand)
The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at {approx}3.09 eV in the nitrogen implanted with 1-2x10{sup 15} ions cm{sup -2} and EB annealed at 800-900 deg. C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.
- OSTI ID:
- 21476247
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoluminescence of He-implanted ZnO
Characterization of the donor-acceptor-pair transition in Nitrogen-implanted zinc oxide
Damage formation and annealing at low temperatures in ion implanted ZnO
Conference
·
Wed Dec 31 23:00:00 EST 2003
·
OSTI ID:977830
Characterization of the donor-acceptor-pair transition in Nitrogen-implanted zinc oxide
Journal Article
·
Tue Apr 15 00:00:00 EDT 2008
· Journal of Applied Physics
·
OSTI ID:21137154
Damage formation and annealing at low temperatures in ion implanted ZnO
Journal Article
·
Sun Nov 06 23:00:00 EST 2005
· Applied Physics Letters
·
OSTI ID:20706451
Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
ELECTRON BEAMS
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
EMISSION SPECTROSCOPY
ENERGY RANGE
EV RANGE
FERMIONS
HEAT TREATMENTS
ION IMPLANTATION
IONIZATION
IONS
KEV RANGE
LEPTON BEAMS
LEPTONS
LUMINESCENCE
MATERIALS
NITROGEN IONS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
ZINC COMPOUNDS
ZINC OXIDES
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
ELECTRON BEAMS
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
EMISSION SPECTROSCOPY
ENERGY RANGE
EV RANGE
FERMIONS
HEAT TREATMENTS
ION IMPLANTATION
IONIZATION
IONS
KEV RANGE
LEPTON BEAMS
LEPTONS
LUMINESCENCE
MATERIALS
NITROGEN IONS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
ZINC COMPOUNDS
ZINC OXIDES