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Properties of nitrogen implanted and electron beam annealed bulk ZnO

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3380592· OSTI ID:21476247
; ;  [1];  [2]
  1. GNS Science, National Isotope Centre, 30 Gracefield Road, P.O. Box 31312 Lower Hutt (New Zealand)
  2. MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand)
The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at {approx}3.09 eV in the nitrogen implanted with 1-2x10{sup 15} ions cm{sup -2} and EB annealed at 800-900 deg. C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.
OSTI ID:
21476247
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English