Damage formation and annealing at low temperatures in ion implanted ZnO

Journal Article · Mon Nov 07 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2126137· OSTI ID:20706451

Lorenz, K; Alves, E; Wendler, E; Bilani, O; Wesch, W; Hayes, M ^[1]

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1. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisbon (Portugal)

N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and 130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.

• OSTI ID: 20706451
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON IONS
CHANNELING
ERBIUM IONS
EV RANGE 10-100
ION IMPLANTATION
NITROGEN IONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES