Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3467532· OSTI ID:21476400

Azarov, A Yu; Svensson, B G; Kuznetsov, A Yu ^[1]; Hallen, A ^[2]; Du, X L ^[3]

---

1. Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)
2. KTH-ICT, Royal Institute of Technology, Electrum 229, SE-164 40 Kista-Stockholm (Sweden)
3. Institute of Physics, The Chinese Academy of Sciences, Beijing 100190 (China)

Thin films of wurtzite Mg{sub x}Zn{sub 1-x}O (x{<=}0.3) grown by molecular beam epitaxy and wurtzite Cd{sub x}Zn{sub 1-x}O (x{<=}0.05) grown by metal organic chemical vapor deposition were implanted at room temperature with 150 keV Er{sup +} ions and 200 keV Au{sup +} ions in a wide dose range. Damage accumulation was studied by Rutherford backscattering/channeling spectrometry. Results show that the film composition affects the damage accumulation behavior in both MgZnO and CdZnO dramatically. In particular, increasing the Mg content in MgZnO results in enhanced damage accumulation in the region between the bulk and surface damage peaks characteristically distinguished in the pure ZnO. However, the overall damage accumulation in MgZnO layers, as well as in pure ZnO, exhibits saturation with increasing ion dose and MgZnO cannot be amorphized even at the highest ion dose used (3x10{sup 16} Er/cm{sup 2}). Increasing the Cd content in CdZnO affects the saturation stage of the damage accumulation and leads to an enhancement of damage production in both Cd and Zn sublattices.

• OSTI ID: 21476400
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 3; Other Information: DOI: 10.1063/1.3467532; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUILDUP
CADMIUM COMPOUNDS
CHANNELING
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
GOLD IONS
ION BEAMS
ION IMPLANTATION
IRRADIATION
KEV RANGE
LAYERS
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES
ALKALINE EARTH METAL COMPOUNDS
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COATING
CRYSTAL GROWTH METHODS
DEPOSITION
DIMENSIONLESS NUMBERS
ENERGY RANGE
EPITAXY
FILMS
IONS
MATERIALS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SPECTROSCOPY
SURFACE COATING
TEMPERATURE RANGE
ZINC COMPOUNDS