Photoluminescence of He-implanted ZnO
- Jung-Kun
A study of the effects of ion-implanted He{sup +} on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He{sup +} ions were implanted at a dose of 2.5 x 10{sup 13}/cm{sup 2} in the (0001) Zn-terminated surface. The implantation process is seen to reduce the overall luminescence efficiency, although the number and relative intensities of the bound-exciton peaks are observed to be similar to that of unimplanted ZnO. The 4.2 K PL of the implanted surface exhibits a broad orange/red peak near 1.86 eV nm and is attributed to damage introduced during the implantation process. This peak is identified as donor-acceptor pair (DAP) luminescence with a thermal activation energy of 11 meV. The 1.86 eV peak is not observed for H-implanted ZnO suggesting that H passivates the implantation-induced defects responsible for this luminescence.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 977830
- Report Number(s):
- LA-UR-04-6011; TRN: US201012%%751
- Resource Relation:
- Journal Volume: 242; Journal Issue: 1-2; Conference: Submitted to: 14th International Conference on Ion Beam Modification of Materials, Monterey, CA, Sep. 6-100, 2004; Nuclear Instruments and Methods in Physics Research B.
- Country of Publication:
- United States
- Language:
- English
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