Direct observation of lattice planes at grain boundaries in silicon nitride
Conference
·
OSTI ID:7234784
Lattice fringe imaging by transmission electron microscopy were used to make direct observations of the crystal lattice planes up to and on either side of selected grain boundaries in Si nitride. Results show that there is no glassy phase at these grain boundaries in a 5 percent MgO hot-pressed Si nitride. Implications for the fracture mechanism of hot-pressed Si nitride, which fails above 1000/sup 0/C, are discussed. (DLC)
- Research Organization:
- California Univ., Berkeley (USA). Lawrence Berkeley Lab.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 7234784
- Report Number(s):
- LBL-5435; CONF-760876-1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
AMORPHOUS STATE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GRAIN BOUNDARIES
IMAGES
INTERFERENCE
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
AMORPHOUS STATE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GRAIN BOUNDARIES
IMAGES
INTERFERENCE
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES