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Direct observation of lattice planes at grain boundaries in silicon nitride

Conference ·
OSTI ID:7234784
Lattice fringe imaging by transmission electron microscopy were used to make direct observations of the crystal lattice planes up to and on either side of selected grain boundaries in Si nitride. Results show that there is no glassy phase at these grain boundaries in a 5 percent MgO hot-pressed Si nitride. Implications for the fracture mechanism of hot-pressed Si nitride, which fails above 1000/sup 0/C, are discussed. (DLC)
Research Organization:
California Univ., Berkeley (USA). Lawrence Berkeley Lab.
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
7234784
Report Number(s):
LBL-5435; CONF-760876-1
Country of Publication:
United States
Language:
English