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THE STRUCTURE OF GRAIN BOUNDARIES IN SILICON NITRIDE BASED ALLOYS

Conference ·
OSTI ID:1004881
Grain boundaries in silicon-based ceramics have been characterized by high resolution electron microscopy including the technique of lattice fringe imaging, and this work is illustrated with examples from both hot-pressed silicon nitrides (MgO and Y{sub 2}O{sub 3} fluxed) and a magnesium-sialon (Mg{sub 1.86} Si{sub 1.67} Al{sub 2.47} O{sub 3.19} N{sub 3.81}). Room temperature observations of the glassy phase are consistent with it being only a partially wetting phase, indicating that it cannot form a continuous film. The atomic configuration of the grain boundaries in both materials is presented together with lattice fringe observations of segregation at grain boundaries in the magnesium-sialon.
Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
Chemical Sciences Division
DOE Contract Number:
AC02-05CH11231
OSTI ID:
1004881
Report Number(s):
LBL-6985
Country of Publication:
United States
Language:
English

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