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Structure of grain boundaries in silicon nitride based alloys

Conference ·
OSTI ID:5094885
Grain boundaries in silicon-based ceramics have been characterized by high resolution electron microscopy including the technique of lattice fringe imaging, and this work is illustrated with exxamples from both hot-pressed silicon nitrides (MgO and Y/sub 2/O/sub 3/ fluxed) and a magnesium-sialon (Mg/sub 1/./sub 86/ Si/sub 1/./sub 67/ Al/sub 2/./sub 47/ O/sub 3/./sub 19/ N/sub 3/./sub 81/). Room temperature observations of the glassy phase are consistent with it being only a partially wetting phase, indicating that it cannot form a continuous film. The atomic configuration of the grain boundaries in both materials is presented together with lattice fringe observations of segregation at grain boundaries in the magnesium-sialon.
Research Organization:
Rockwell International Corp., Thousand Oaks, Calif. (USA). Science Center; California Univ., Berkeley (USA). Lawrence Berkeley Lab.
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5094885
Report Number(s):
LBL-6985; CONF-771137-3
Country of Publication:
United States
Language:
English