Interfacial microstructures of ultrathin Ge layers on Si probed by x-ray scattering and fluorescence yield
- Department of Physics, SUNY at Buffalo, Buffalo, New York, 14260 (United States)
- IBM Research Division, IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 (United States)
Angular dependence of grazing-incidence x-ray scattering and Ge [ital K][alpha] fluorescence yield were measured for buried ultrathin Ge layers grown on bulk Si by molecular beam epitaxy. Results obtained for samples with different Ge layer thickness are compared. The data reveal information on microstructures in these layered materials in terms of the average interfacial roughness, correlation lengths of height fluctuations, and Ge density profile. Structural parameters are obtained by comparison of experimental data with theoretical models.The results also indicate that the interfacial roughness at neighboring interfaces is highly correlated. Significant changes of microstructures in the Ge epilayer are found as the layer thickness approaches the critical thickness. The x-ray scattering techniques are demonstrated to be capable of detecting a precursor of lattice relaxation in multilayers of lattice-mismatched compound semiconductors.
- DOE Contract Number:
- FG02-87ER45283; FG02-86ER45231
- OSTI ID:
- 7229140
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:11; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
665100 -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL ANALYSIS
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
EPITAXY
GERMANIUM
HETEROJUNCTIONS
INTERFACES
JUNCTIONS
METALS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NONDESTRUCTIVE ANALYSIS
ROUGHNESS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SURFACE PROPERTIES
X-RAY DIFFRACTION
X-RAY EMISSION ANALYSIS
X-RAY FLUORESCENCE ANALYSIS