Interfacial roughness scaling and strain in lattice mismatched Si{sub 0.4}Ge{sub 0.6} thin films on Si

Journal Article · Mon Jul 31 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115411· OSTI ID:83896

Ming, Z H; Huang, S; Soo, Y L; Kao, Y H ^[1]; Carns, T; Wang, K L ^[2]

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1. Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States)
2. Electrical Engineering Department, University of California at Los Angeles, California 90024 (United States)

Interfacial roughness parameters and lattice strain of Si{sub 0.4}Ge{sub 0.6} films with varying thickness epitaxially grown on Si(100) were determined using the techniques of grazing-incidence x-ray scattering and diffraction. The roughness of {ital both} the buried interface and sample surface follows a similar power-law scaling behavior with an exponent {beta} around 0.71 for films below the critical thickness, and it undergoes a large change above the critical thickness. Observation of such a scaling law thus establishes a quantitative correlation between the interfacial roughness and lattice strain, and also allows the prediction of interfacial roughness as a function of film thickness of this compound. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• DOE Contract Number: FG02-87ER45283; FG02-86ER45231
• OSTI ID: 83896
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
GERMANIUM ALLOYS
HETEROJUNCTIONS
MICROSTRUCTURE
MORPHOLOGY
ROUGHNESS
SILICON ALLOYS
STRAINS
STRESS RELAXATION
X-RAY DIFFRACTION