Microscopic structure of interfaces in Si[sub 1[minus][ital x]]Ge[sub [ital x]]/Si heterostructures and superlattices studied by x-ray scattering and fluorescence yield
- Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260 (United States)
- Electrical Engineering Department, University of California, Los Angeles, California 90024 (United States)
The angular dependences of grazing-incidence x-ray scattering and Ge [ital K][alpha] fluorescence yield were measured for Si[sub 1[minus][ital x]]Ge[sub [ital x]]/Si and its inverted Si/Si[sub 1[minus][ital x]]Ge[sub [ital x]] heterostructures. The results reveal useful information on microstructures in these layered materials and show similar interfacial structures in terms of the rms interfacial roughness, correlation length of height fluctuations, and Ge density profile. Two ten-period superlattices with different thickness and Ge concentration were also investigated; correlation between height fluctuations of different interfaces is clearly demonstrated in the data of x-ray-diffuse scattering. These results show that x-ray scattering and fluorescence techniques can be employed as convenient tools for nondestructive characterization of epilayer thickness, interfacial roughness, density profile of selected atomic species, and correlations between microstructures of different interfaces in layered materials.
- OSTI ID:
- 5653208
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:24; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
FEEDING
FLUORESCENCE
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
GRAZING
INTERFACES
LUMINESCENCE
MICROSTRUCTURE
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUPERLATTICES
X-RAY DIFFRACTION