Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffraction
- Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260 (United States)
- Department of Chemical Engineering, State University of New York at Buffalo, Buffalo, New York 14260 (United States)
Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II{endash}VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs(004) peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for {ital nondestructive} characterization of buried interfaces in semiconductor layer materials. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 289249
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 85; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray scattering and absorption studies of MnAs/GaAs heterostructures
Interface formation and film morphology for growth of Fe and Co on ZnSe(001)