Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Picosecond radiation-induced current transients in digital GaAs MESFETs

Technical Report ·
OSTI ID:7222712
; ; ;
Picosecond-resolution measurements of the current transients produced when energetic ions (alpha particles) interact with high-speed digital GaAs MESFETs are presented. Measurements as a function of device bias and temperature reveal the presence of several different contributions to the charge-collection transients, ranging in time scale from picoseconds to microseconds. The effects of permanent radiation damage are found to degrade device performance to the extent that reliable measurement of the ion-induced transients is difficult and, in many cases, impossible. The use of above-bandgap picosecond laser excitation is revealed to be a viable alternative to the use of heavy ions for characterization of the charge-collection dynamics in semiconductor devices.
Research Organization:
Naval Research Lab., Washington, DC (United States)
OSTI ID:
7222712
Report Number(s):
AD-P-007653/9/XAB
Country of Publication:
United States
Language:
English

Similar Records

Fast charge collection in GaAs MESFETs
Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:5722119
Single-event dynamics of high-performance HBTs and GaAs MESFETs
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6839963
Ion induced charge collection in GaAs MESFETs
Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:7029254

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
DAMAGE
ENERGY-LEVEL TRANSITIONS
EXCITATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAVY IONS
IONS
LASERS
LIGHT SCATTERING
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RESOLUTION
SCATTERING
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS