Ion induced charge collection in GaAs MESFETs

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7029254

Campbell, A; Knudson, A; McMorrow, D; Anderson, W; Roussos, J ^[1]; Espy, S ^[2]; Buchner, S; Kang, K ^[3]; Kerns, D; Kerns, S ^[4]

---

1. Naval Research Lab, Washington, DC (US)
2. Martin-Mariettta, Denver, CO (US)
3. Martin-Marietta, Baltimore, MD (US)
4. Vanderbilt Univ., Nashville, TN (US)

Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution.

• OSTI ID: 7029254
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CHARGE COLLECTION
CHARGED PARTICLES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
IONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS