Pulsed laser-induced charge collection in GaAs MESFETs

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5937785

Knudson, A R; Campbell, A B; McMorrow, ^[1]; Buchner, S; Kang, K ^[2]; Weatherford, T ^[3]; Srinivas, V; Swartzlander, Jr, G A; Chen, Y J ^[4]

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1. Naval Research Lab., Washington, DC (USA)
2. Martin Marietta Labs., Baltimore, MD (USA)
3. SFA Inc., Landover, MD (US)
4. Maryland Univ., Baltimore, MD (USA)

Pulsed picosecond lasers with variable wavelength have been used to investigate the details of charge collection in GaAs MESFETs. In short gate-length devices, charge collection at the drain may be much larger than at the gate and greater than the charge produced by the laser pulses.

• OSTI ID: 5937785
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CHARGES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
PULSES
TUNING