Fast charge collection in GaAs MESFETs

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5722119

McMorrow, D; Knudson, A R; Campbell, A B ^[1]

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1. Naval Research Lab., Washington, DC (USA)

Time-resolved charge collection measurements on 1 {mu}m gate length digital GaAs MESFETs with a variety of energetic ions and picosecond laser pulses exhibit risetimes as short as 25 ps with pulsewidths of {approximately}35 ps. Evidence is presented for the presence of three distinct-timescale charge collection processes, with time constants ranging from less than 25 ps to {gt} 1 {mu}s. The effects of radiation damage on the charge-collection transients are presented, and the use of above band-gap picosecond laser excitation is demonstrated as a viable alternative to ion excitation for characterization of the dynamical response of high-frequency, radiation-sensitive devices to rapid charge deposition.

• OSTI ID: 5722119
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CHARGES
ELECTRICAL TRANSIENTS
ELECTRONIC CIRCUITS
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TRANSIENTS
VOLTAGE DROP