Charge collection in GaAs MESFETs and MODFETs

Conference · Sun Dec 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5614033

Buchner, S; Kang, K; Tu, D W ^[1]; Knudson, A R; Campbell, A B; McMorrow, D ^[2]; Srinivas, V; Chen, Y J ^[3]

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1. Martin Marietta Labs., Baltimore, MD (United States)
2. Naval Research Lab., Washington, DC (United States)
3. Maryland Univ., Baltimore, MD (United States)

This paper reports on a comparison of the amount of charge collected at the drains of GaAs MESFETs irradiated with pulsed laser light and ions and having different gate lengths which shows orders of magnitude more charge collected for 0.1-{mu}m MESFETs than for 1.2-{mu}m MESFETs manufactured using different processes. Analyses of the dependence of the photocurrent pulses on gate and drain voltages, temperature, and light intensity suggest that the enhanced charge collection is primarily due to modulation of the channel width by positive charge trapped in the vicinity of the channel. Enhanced charge collection via channel modulation also occurs in pseudomorphic MODFETs. Pulses with characteristics similar to those produced by laser light, i.e., large amplitudes and long decay times, were obtained when 0.1-{mu}m MESFETs were irradiated with He and Si ions. These results reveal the important role played by traps in determining SEU sensitivity in GaAs MESFETs with shortshort gate lengths.

• OSTI ID: 5614033
• Report Number(s): CONF-910751--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLITUDES
ARSENIC COMPOUNDS
ARSENIDES
CHARGE COLLECTION
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HELIUM IONS
IONS
LASER RADIATION
PNICTIDES
PULSES
RADIATION EFFECTS
RADIATIONS
SENSITIVITY
SILICON IONS
TESTING