Ion induced charge collection in GaAs MESFETs and its effect on SEU vulnerability

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5832583

Hughlock, B; Williams, T; Johnston, A; Plaag, R ^[1]

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1. High Temperature Center, Boeing Defense and Space Group, Seattle, WA (US)

This paper reports on an ion induced charge collection study, using an array of GaAs enhancement-mode MESFET geometries which has identified two primary excess charge collection effects, a fringe field effect and a gated channel effect. The introduction of a buried p-layer was found to suppress the fringe field effect, which resulted in a reduction in the maximum excess charge collected. The LET threshold for SEU was similar for both processes. For the devices used in this study, the results suggest that the gated channel effect is primarily responsible for the low SEU LET threshold.

• OSTI ID: 5832583
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANIONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELECTRIC CHARGES
ELECTRONIC CIRCUITS
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GEOMETRY
IONS
MATHEMATICS
PNICTIDES
RADIATION EFFECTS
THRESHOLD ENERGY