Single-event dynamics of high-performance HBTs and GaAs MESFETs

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6839963

McMorrow, D; Melinger, J S; Campbell, A B ^[1]; Weatherford, T; Knudson, A R; Tran, L H

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1. Naval Research Lab., Washington, DC (United States)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

• OSTI ID: 6839963
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
CHARGE COLLECTION
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZATION
JUNCTION TRANSISTORS
LASER RADIATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS