Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: Computer simulation

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556884· OSTI ID:445457

McMorrow, D; Melinger, J S; Campbell, A B ^[1]; Curtice, W R ^[2]; Buchner, S; Knudson, A R ^[3]

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1. Naval Research Lab., Washington, DC (United States)
2. W.R. Curtice Consulting, Princeton Junction, NJ (United States)
3. SFA, Inc., Landover, MD (United States)

Two-dimensional device simulations of GaAs MESFETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer reveal a sensitive dependence of the charge-collection characteristics on various structural and operational parameters. Simulations performed for above-band-gap pulsed laser excitation indicate that, even when the bulk of the charge is deposited above the LT region, the improved SEU and charge-collection performance of LT GaAs devices largely is a consequence of the reduced efficiency of the carrier-induced charge-enhancement (gain) mechanisms.

• OSTI ID: 445457
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
COMPUTERIZED SIMULATION
ERRORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HEAVY IONS
LASER RADIATION
PHYSICAL RADIATION EFFECTS
THEORETICAL DATA