Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer
- Naval Research Lab., Washington, DC (United States); and others
The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs.
- OSTI ID:
- 277732
- Report Number(s):
- CONF-9509107--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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