Experimental and theoretical study of alpha particle induced charge collection in GaAs FETs

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:5019674

Anderson, W T; Knudson, A R; Buot, F A; Grubin, H L; Kreskovsky, J P; Campbell, A B

An experimental angular dependence study was made of charge collection in state-of-the-art GaAs FETs. Numerical simulations of the transport of electrons in the active channel and in the semi-insulating substrate were also carried out. It is concluded that charge collected by funneling from the substrate is not significant. Both energy loss in the source and drain metallizations and degradation of the potential funneling profile at larger angles of incidence may also play major roles in the charge collection efficiency of the gate.

• Research Organization: Naval Research Lab., Washington, DC 20375 (US)
• OSTI ID: 5019674
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
DATA
ELECTRON CHANNELING
ELECTRON TRANSFER
ENERGY LOSSES
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LOSSES
NUMERICAL DATA
NUMERICAL SOLUTION
PNICTIDES
SEMICONDUCTOR DEVICES
THEORETICAL DATA
TRANSISTORS