Neutron radiation effects in gold and aluminum GaAs Schottky diodes

Conference · Wed Dec 01 04:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7213069

Borrego, J M; Gutmann, R J; Ashok, S

The electrical characteristics of guarded Au- and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 x 10/sup 15/ to 8 x 10/sup 16/ cm/sup -3/ have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the C-V and the forward I-V characteristics but increase significantly the reverse current. Assuming Levine's model for a Schottky barrier, the slight changes in the I-V characteristics at forward bias and small reverse bias voltage have been attributed to a change in the distribution of interface states at the metal-semiconductor interface. The excess, non-thermionic reverse current observed after low fluence neutron irradiation is not due to surface leakage or classical generation-recombination but appears to be due to a high field process. Consideration of several high field effect mechanisms indicates that field emission from a deep level is the likely cause.

• Research Organization: Rensselaer Polytechnic Inst., Troy, NY
• OSTI ID: 7213069
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DATA
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
FERMIONS
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
HADRONS
INFORMATION
METALS
NEUTRONS
NUCLEONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS