Changes in Au-GaAs Schottky barrier diodes with low neutron fluence

Journal Article · Thu Jan 01 04:00:00 EST 1976 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.88735· OSTI ID:4030172

Borrego, J. M.; Gutmann, R. J.

Guarded Au/n-GaAs Schottky barrier diodes fabricated from epitaxial and bulk material with carrier concentrations of 2.2x10¹⁶ and 7.8x10¹⁶ cm^-3, respectively, were exposed to fast neutron fluences between 3.6x10¹⁴ and 2.2x10¹⁵ neutron/cm². The forward I-V and 1-MHz C- V characteristics remained relatively unchanged after irradiation at the lower fluences where carrier compensation is small (reduction in carrier concentration less than 15%). However, the reverse current increased by more than one order of magnitude at room temperature, which is neither a result of surface leakage (prevented by the guarded device structure used), classical generation- recombination current (depletion volume changes are too small), nor thermionic emission (too weak a temperature dependence). This increase in reverse current is attributed to enhanced field emission from traps.

• Research Organization: Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12181
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-026448
• OSTI ID: 4030172
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 28; ISSN APPLAB; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

*GALLIUM ARSENIDES-- PHYSICAL RADIATION EFFECTS
*GOLD ALLOYS-- PHYSICAL RADIATION EFFECTS
36 MATERIALS SCIENCE
CARRIER DENSITY
CHARGE CARRIERS
FAST NEUTRONS
FIELD EMISSION
IRRADIATION
NEUTRON FLUENCE
SCHOTTKY BARRIER DIODES