Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes
- Kuznetsov Siberian Physicotechnical Institute at the Tomsk State University (Russian Federation)
- Research Institute of Semiconductor Devices (Russian Federation)
Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor.
- OSTI ID:
- 21088522
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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