Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Journal Article · Tue Apr 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4917566· OSTI ID:22402878

Ren, Jian; Yan, Dawei; Yang, Guofeng; Wang, Fuxue; Xiao, Shaoqing; Gu, Xiaofeng ^[1]

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1. Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

• OSTI ID: 22402878
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 15 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON EMISSION
GALLIUM NITRIDES
GOLD
HETEROJUNCTIONS
INDIUM COMPOUNDS
LEAKAGE CURRENT
PLATINUM
SCHOTTKY BARRIER DIODES
TEMPERATURE DEPENDENCE
THERMIONIC EMISSION
TUNNEL EFFECT