Interface states in Schottky barrier diodes. Interim report

Technical Report · Sun Aug 01 04:00:00 EDT 1976

OSTI ID:7313575

Borrego, J M; Gutmann, R J

The electrical behavior of Schottky barrier junctions before and after neutron irradiation have been explored. Guarded Au/nGaAs diodes were fabricated from bulk and epitaxial material with a preirradiation n factor of 1.03 and saturation current density of 10 to the minus 8th power amps/sq cm. After irradiation with low neutron fluences (i.e., carrier removal less than 10%) the reverse current increased by one to two orders of magnitude with only a slight increase in n factor. I-V and C-V measurements from 77K to 360K and photoelectric measurements at room temperature were taken in developing an understanding of the effect of neutron irradiation on the electrical characteristics of these Schottky barrier diodes (including with transient ionizing radiation). The experimental results have been interpreted from an interface state density model as suggested by Levine. The results of this model have been compared to those reported by Levine and Crowell and Roberts with unirradiated diodes. The limitations of interpreting the results using the interface state density model have been delineated experimentally. Calculations indicate that current from field-enhanced emission is present in addition to thermionic emission current from the interface state model. Implications of these results on the use of Schottky junction devices in neutron radiation environments are presented.

• Research Organization: Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Electrical and Systems Engineering
• OSTI ID: 7313575
• Report Number(s): AD-A-034425
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CURRENT DENSITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
MATHEMATICAL MODELS
NEUTRONS
NUCLEONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES