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Photoemission study on the formation of Mo contacts to CuInSe sub 2

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.351775· OSTI ID:7203559
; ;  [1]; ; ;  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589 (United States)
Synchrotron radiation soft-x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the Mo/CuInSe{sub 2} interface. Mo overlayers were {ital e}-beam deposited in steps on single-crystal {ital n}-type CuInSe{sub 2} at ambient temperature. Photoemission measurements were acquired after each growth in order to observe changes in the valence-band electronic structure as well as changes in the In 4{ital d}, Se 3{ital d}, and Mo 4{ital d} core lines. Photoemission measurements on the valence-band and core lines were also obtained after annealing. The results were used to correlate the interface chemistry with the electronic structure at this interface and to directly determine the maximum possible Schottky barrier height {phi}{sub {ital b}} to be {le}0.2 eV at the Mo/CuInSe{sub 2} junction before annealing, thus showing that this contact is essentially ohmic.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
7203559
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:3; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English

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