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Formation and Schottky barrier height of Au contacts to CuInSe sub 2

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.577559· OSTI ID:5558130
; ;  [1];  [2]; ;  [3]
  1. Solar Energy Research Institute, Golden, Colorado 80401 (USA)
  2. Physics Department, University of Calabria, 87036 Arcavacata di Rende, Cosenza, Italy (IT)
  3. Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (USA)
Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the Au/CuInSe{sub 2} interface. Au overlayers were deposited in steps on single-crystal {ital p} and {ital n}-type CuInSe{sub 2} at ambient temperature. Reflection high-energy electron diffraction analysis before and during growth of the Au overlayers indicated that the Au overlayer was amorphous. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In 4{ital d} and Se 3{ital d} core lines. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the Au/CuInSe{sub 2} Schottky barrier height.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5558130
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN JVTAD; ISSN 0734-2101
Country of Publication:
United States
Language:
English