Proton, neutron, and electron-induced displacement damage in germanium
- Naval Research Lab., Washington, DC (US)
- Mission Research Corp., San Diego, CA (US)
Displacement damage factors for several types of germanium bipolar transistors have been measured for 15 and 30 MeV electrons, 22, 40 and 63 MeV protons, and fission neutrons. Each device was irradiated both with neutrons and either electrons or protons so that damage factor ratios could be taken. In this way dependences on resistivity, injection level, and device variability could be removed. The damage factor ratios were found to be directly proportional to the calculated nonionizing energy loss for electrons and protons over approximately two orders of magnitude. This means that the damage factors are directly proportional to the number of defects initially formed, whether as point defects or in cascades, and that the stable defects act independently so far as transistor gain is concerned. No evidence of cluster space charge effects was found. The implication of the results to a determination of a 1 MeV(Ge) neutron damage equivalent fluence is discussed.
- OSTI ID:
- 7202239
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BARYONS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GERMANIUM
HADRONS
HARDENING
INTERACTIONS
LEPTONS
MATTER
METALS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
PROTONS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS