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High energy electron induced displacement damage in silicon

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6166353
; ; ; ;

New measurements of displacement damage factors for electron irradiated (4 to 53 MeV) bipolar silicon transistors have extended the correlation between nonionizing energy loss (NIEL) and damage factors. Using devices from the same lots as in previous work, electron damage factors are normalized to neutron (1 MeV equivalent) damage factors, and compared with new calculations of nonionizing energy deposition for electrons with energies up to 1 GeV. This extends the correlation another three orders of magnitude downward in NIEL to cover a total of six decades. To first order, the correlation remains linear for both n- and p-type silicon, but deviations are observed and explained in terms of differences in the fraction of initial vacancy interstitial pairs which recombines. These differences are shown to correlate linearly with the low energy component of the PKA spectrum.

Research Organization:
Naval Research Lab., Washington, DC (US); Mission Research Corp., San Diego, CA (US); Wolicki Associates, Inc., Alexandria, VA (US)
OSTI ID:
6166353
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CALCULATION METHODS
CHARGED-PARTICLE TRANSPORT
DEFECTS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LOSSES
FERMIONS
IRRADIATION
LEPTONS
LOSSES
NEUTRAL-PARTICLE TRANSPORT
NEUTRON TRANSPORT
NONMETALS
OXYGEN
PHYSICAL RADIATION EFFECTS
PROTON TRANSPORT
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS