Correlation of particle-induced displacement damage in silicon

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6935358

Summers, G P; Burke, E A; Dale, C J; Wolicki, E A; Marshall, P W; Gehlhausen, M A

Correlation is made between the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons. These measurements are compared to calculations of the nonionizing energy deposition in silicon as a function of particle type and energy. The main conclusions of the work are as follows: 1) The ratio of the displacement damage factors for a given charged particle to the 1 MeV equivalent neutron damage factor, as a function of energy, falls on a common curve which is independent of collector current. 2) Deuterons of a given energy are about twice as damaging as protons and helium ions are about eighteen times as damaging as protons. 3) The ratios of the calculated nonionizing energy deposition in silicon by protons, deuterons, and helium ions as a function of energy to the calculated nonionizing energy deposition by 1 MeV neutrons, agree exactly with the experimental damage factor ratios over the whole energy range considered, with no fitted parameters. 4) This agreement means that there is a linear dependence of the experimental displacement damage factors on nonionizing energy deposition for all particles (including neutrons) and for all energies. 5) Therefore, the damage factors for different particles are directly proportional to the number of defects originally produced, are not affected by defect cascades, and are independent of the PKA spectrum.

• Research Organization: Naval Research Lab., Washington, DC (US)
• OSTI ID: 6935358
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
654003 -- Radiation & Shielding Physics-- Neutron Interactions with Matter
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARYONS
CALCULATION METHODS
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CORRELATIONS
DATA
DEUTERIUM IONS
ELASTIC SCATTERING
ELEMENTARY PARTICLES
ELEMENTS
ENERGY DENSITY
ENERGY DEPENDENCE
EXPERIMENTAL DATA
FERMIONS
HADRONS
HELIUM IONS
INELASTIC SCATTERING
INFORMATION
ION CHANNELING
IONS
MULTIPLE SCATTERING
NEUTRONS
NUCLEONS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS