Displacement damage equivalent to dose in silicon devices

Journal Article · Sun Jan 29 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100949· OSTI ID:6567236

Dale, C J; Marshall, P W; Summers, G P; Wolicki, E A; Burke, E A

Particle-induced displacement damage effects in silicon bipolar transistors, including those due to electrons and to fission neutrons, are correlated on the basis of the nonionizing energy deposited in the lattice by the primary knock-on atoms. Deviations from linearity between damage effects and energy deposition are in a direction opposite to those expected from defect cluster models but can be accounted for in terms of the fraction of vacancy-interstitial pairs initially formed that survive recombination.

• Research Organization: Naval Research Laboratory, Washington, DC 20375
• OSTI ID: 6567236
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
INTERSTITIALS
LEPTONS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS
VACANCIES