Electronic and structural properties of deep levels in irradiated germanium

Thesis/Dissertation · Thu Jan 01 00:00:00 EST 1987

OSTI ID:7201994

Nagesh, V

Deep-level defects introduced by gamma and neutron irradiation in n-type germanium were studied using Deep Level Transient Spectroscopy (DLTS). The energy levels and capture cross sections for the four electron traps observed are presented. Symmetry of the defect associated with energy level at E/sub C/ - 0.09 eV in neutron-irradiated Ge was determined using DLTS in conjunction with calibrated uniaxial stress. This DLTS level is composed of 12 individual levels, however, some of these levels are again degenerate, and hence the peak splits into components of intensity ratios 8:4, 6:3:3, and 4:6:2 for stress along (001), (111) and (110) respectively. E/sub 1/ exhibits C/sub 1h/ symmetry and it is identified as the planar tetravacancy. The defect at E/sub C/ - 0.17 eV is the divacancy, the vacancy-oxygen pair is associated with the level at E/sub C/ - 0.27 eV. The dominant deep level in both neutron- and ..gamma..-irradiated material is the center at E/sub C/ - 0.35 eV, which is tentatively identified as the vacancy -donor defect.

• Research Organization: Missouri Univ., Columbia (USA)
• OSTI ID: 7201994
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
PHYSICAL RADIATION EFFECTS
CROSS SECTIONS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
ENERGY LEVELS
N-TYPE CONDUCTORS
NEUTRON BEAMS
PHOTON BEAMS
TRAPS
BEAMS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
LEPTONS
MATERIALS
METALS
NUCLEON BEAMS
PARTICLE BEAMS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
360605* - Materials- Radiation Effects