Electronic and structural properties of deep levels in irradiated germanium
Deep-level defects introduced by gamma and neutron irradiation in n-type germanium were studied using Deep Level Transient Spectroscopy (DLTS). The energy levels and capture cross sections for the four electron traps observed are presented. Symmetry of the defect associated with energy level at E/sub C/ - 0.09 eV in neutron-irradiated Ge was determined using DLTS in conjunction with calibrated uniaxial stress. This DLTS level is composed of 12 individual levels, however, some of these levels are again degenerate, and hence the peak splits into components of intensity ratios 8:4, 6:3:3, and 4:6:2 for stress along (001), (111) and (110) respectively. E/sub 1/ exhibits C/sub 1h/ symmetry and it is identified as the planar tetravacancy. The defect at E/sub C/ - 0.17 eV is the divacancy, the vacancy-oxygen pair is associated with the level at E/sub C/ - 0.27 eV. The dominant deep level in both neutron- and ..gamma..-irradiated material is the center at E/sub C/ - 0.35 eV, which is tentatively identified as the vacancy -donor defect.
- Research Organization:
- Missouri Univ., Columbia (USA)
- OSTI ID:
- 7201994
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
BEAMS
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMIONS
GERMANIUM
LEPTONS
MATERIALS
METALS
N-TYPE CONDUCTORS
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PHOTON BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRAPS