Comparison of defects produced by 14-MeV neutrons and 1-MeV electrons in n -type silicon

Journal Article · Thu Aug 01 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.349581· OSTI ID:5620078

Chaudhari, P; Bhoraskar, S V; Padgavkar, S; Bhoraskar, V N ^[1]

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1. Department of Physics, University of Poona, Pune-411 007, India (IN)

Defects produced in lightly doped crystalline silicon by 1-MeV electrons and 14-MeV neutrons are studied. Deep level transient spectroscopy (DLTS) and Hall voltage measurements have been used for investigating the energy depth, nature, and density of radiation-induced defects. The extent of damage caused by 14-MeV neutrons is found to be comparatively high as inferred from the continuous distribution of gap states in the DLTS measurement. Identical defects were observed in both cases where the {ital A}-center ({ital E}{sub {ital c}}{minus}0.17 eV), {ital E}-center ({ital E}{sub {ital c}}{minus}0.39 eV), and divacancy ({ital E}{sub {ital c}}{minus}0.23 eV) were prominent. An additional defect level ({ital E}{sub {ital c}}{minus}0.86 eV) was observed from DLTS for neutron-irradiated samples.

• OSTI ID: 5620078
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BARYONS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
HADRONS
HALL EFFECT
LEPTONS
MATERIALS
MEV RANGE
MEV RANGE 01-10
MEV RANGE 10-100
N-TYPE CONDUCTORS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
VACANCIES